*
–9.7 A,
–20 V. RDS(ON) = 10.0 mΩ @ VGS =
–4.5 V RDS(ON) = 14.5 mΩ @ VGS =
–2.5 V
* Extended VGSS.
with a wide range of gate drive voltage (2.5V
– 12V).
Features
*
–9.7 A,
.
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V
– 12V).
Fe.
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